2025-04-14+00:0013:17:24+00:0016https://www.utwente.nlORG-0001Universiteit TwenteDrienerlolaan 5Enschede7522NBNL213NLD50130536Camilio Delfgaauw+31534891512c.delfgaauw@utwente.nlORG-0002Rechtbank OverijsselAlmelo7607 GBNL213NLD82940525(+31)0883611042communicatie.rb-ove@rechtspraak.nl00248600-202575/20252025-04-16+02:002.3eforms-sdk-1.11e1343fc7-7bb0-4c37-9241-20c4935893eff7dc0cc9-05fc-482f-812d-aeac3a214c4f2025-04-14+00:0011:51:41+00:000132014L0024cn-standardENGhttps://s2c.mercell.com/buyer/16033body-pleducationORG-0001corruptionSee descriptive documentcrime-orgSee descriptive documentfinan-laundSee descriptive documentfraudSee descriptive documenthuman-trafficSee descriptive documentterr-offenceSee descriptive documentopenfalseEB-OUT 6685European Tender Two Parallel Plate Plasma-enhanced Chemical Vapor Deposition (PECVD) SystemsThe University of Twente is tendering to purchase two new Plasma-Enhanced Chemical Vapor Deposition systems. The MESA+ Institute will invest in two new systems for deposition of (doped) dielectric thin films to upgrade and reinforce their state-of-the-art thin film technology and processing capacity. The systems will be used for moderate-temperature deposition of low stress thin films. For the following materials: silicon dioxide (SiO2) boron-doped SiO2 (BSG) phosphorus-doped SiO2 (PSG) boron-phosphorus-doped SiO2 (BPSG) low-stress silicon nitride (SiNx) silicon oxynitride (SiOxNy) amorphous silicon (aSi)supplies80000038000000Zie documentatieanyw-couNLDLOT-0000ef-standn-usedsui-actn-usedtp-abiln-usedno-eu-fundsTender documentennon-restricted-documenthttps://s2c.mercell.com/today/146612noneallowednonot-allowedhttps://s2c.mercell.com/today/1466127See descriptive documentORG-0001ORG-0002ENGfalsetrueallowedfalse2025-05-26+00:0010:00:00+00:002025-05-26+00:0010:30:00+00:00falsenonenoneEB-OUT 6685European Tender Two Parallel Plate Plasma-enhanced Chemical Vapor Deposition (PECVD) SystemsThe University of Twente is tendering to purchase two new Plasma-Enhanced Chemical Vapor Deposition systems. The MESA+ Institute will invest in two new systems for deposition of (doped) dielectric thin films to upgrade and reinforce their state-of-the-art thin film technology and processing capacity. The systems will be used for moderate-temperature deposition of low stress thin films. For the following materials: silicon dioxide (SiO2) boron-doped SiO2 (BSG) phosphorus-doped SiO2 (PSG) boron-phosphorus-doped SiO2 (BPSG) low-stress silicon nitride (SiNx) silicon oxynitride (SiOxNy) amorphous silicon (aSi)supplies80000038000000Zie documentatieanyw-couNLD2025-08-18Z2026-07-01Z